mosfet l generation v technology l ultra low on-resistance l dual n-channel mosfet l surface mount l available in tape & reel l dynamic dv/dt rating l fast switching description the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infra red, or wave soldering techniques. power dissipation of greater than 0.8w is possible in a typical pcb mount application. IRF7303 sop-8 d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 parameter max. units i d @ t a = 25c 10 sec. pulsed drain current, v gs @ 10v 5.3 i d @ t a = 25c continuous drain current, v gs @ 10v 4.9 i d @ t a = 70c continuous drain current, v gs @ 10v 3.9 i dm pulsed drain current ? 20 p d @t a = 25c power dissipation 2.0 w linear derating factor 0.016 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j, t stg junction and storage temperature range -55 to + 150 c absolute maximum ratings a v dss = 30v r ds(on) = 0.050 w thermal resistance ratings parameter typ. max. units r q ja maximum junction-to-ambient ? CCC 62.5 c/w www.kersemi.com 1 2014-8-8
IRF7303 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.032 CCC v/c reference to 25c, i d = 1ma CCC CCC 0.050 v gs = 10v, i d = 2.4a ? CCC CCC 0.080 v gs = 4.5v, i d = 2.0a ? v gs(th) gate threshold voltage 1.0 CCC CCC v v ds = v gs , i d = 250a g fs forward transconductance 5.2 CCC CCC s v ds = 15v, i d = 2.4a CCC CCC 1.0 v ds = 24v, v gs = 0v CCC CCC 25 v ds = 24v, v gs = 0v, t j = 125 c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = - 20v q g total gate charge CCC CCC 25 i d = 2.4a q gs gate-to-source charge CCC CCC 2.9 nc v ds = 24v q gd gate-to-drain ("miller") charge CCC CCC 7.9 v gs = 10v, see fig. 6 and 12 ? t d(on) turn-on delay time CCC 6.8 CCC v dd = 15v t r rise time CCC 21 CCC i d = 2.4a t d(off) turn-off delay time CCC 22 CCC r g = 6.0 w t f fall time CCC 7.7 CCC r d = 6.2 w, see fig. 10 ? between lead tip and center of die contact c iss input capacitance CCC 520 CCC v gs = 0v c oss output capacitance CCC 180 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 72 CCC ? = 1.0mhz, see fig. 5 notes: parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC 1.0 v t j = 25c, i s = 1.8a, v gs = 0v ? t rr reverse recovery time CCC 47 71 ns t j = 25c, i f = 2.4a q rr reverse recoverycharge CCC 56 84 nc di/dt = 100a/s ? t on forward turn-on time ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd 2.4a, di/dt 73a/s, v dd v (br)dss , t j 150c ? pulse width 300s; duty cycle 2%. source-drain ratings and characteristics electrical characteristics @ t j = 25c (unless otherwise specified) intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) CCC CCC 20 CCC CCC 2.5 a s d g i gss i dss drain-to-source leakage current l s internal source inductance CCC 6.0 CCC l d internal drain inductance CCC 4.0 CCC nh ns na a w r ds(on) static drain-to-source on-resistance s d g ? surface mounted on fr-4 board, t 10sec. www.kersemi.com 2 2014-8-8
fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics fig 2. typical output characteristics 1 10 100 1000 0.1 1 10 100 i , drain-to-so urce c urre nt (a ) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bott om 4.5v 20s p ulse width t = 25c a 4.5v j 1 10 100 1000 0.1 1 10 100 i , drain-to-s ource current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bott om 4.5v 20s pulse width t = 150c a 4.5v j 10 100 45678910 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , d rain-to-source current (a) a v = 1 5 v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain -to -s ource o n re sistance ds(on) (norm alized) v = 10 v gs a i = 4 .0a d IRF7303 www.kersemi.com 3 2014-8-8
fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage 0 200 400 600 800 1000 1 10 100 c, capacitance (pf) ds v , d rain-to-source voltage (v) a v = 0 v, f = 1 mhz c = c + c , c s ho rted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c is s c oss c rs s 0 4 8 12 16 20 0 5 10 15 20 25 q , total gate charge (nc) g v , g ate-to-so urce v oltage (v ) gs a for test circuit see fig ure 12 i = 2 .4a v = 2 4v d ds 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 t = 25c t = 150c j j v = 0 v gs v , source-to-drain voltage (v) i , reverse d ra in cu rren t (a) sd sd a 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms IRF7303 www.kersemi.com 4 2014-8-8
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit + - v ds 90% 10% v gs t d(on) t r t d(off) t f v ds 10v pulse width 1 s duty factor 0.1 % fig 9. maximum drain current vs. ambient temperature fig 10b. switching time waveforms r d v gs v dd r g d.u.t. fig 11. maximum effective transient thermal impedance, junction-to-ambient 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) i , drain current (a) c d IRF7303 www.kersemi.com 5 2014-8-8
fig 12a. basic gate charge waveform fig 12b. gate charge test circuit d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge 10v IRF7303 www.kersemi.com 6 2014-8-8
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 13. for n-channel hexfets * vgs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * IRF7303 www.kersemi.com 7 2014-8-8
package outline so8 outline so8 part marking information example : this is an irf7101 date code (yw w ) y = last digit of the year ww = week w afer lo t co de (last 4 digits) xxxx bottom part number top international rectifier lo g o f7101 312 k x 45 c 8x l 8x q h 0.25 (.010) m a m a 0.10 (.004) b 8x 0.25 (.010) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3x dim inches millimeters min max min max a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 basic 1.27 basic e1 .025 basic 0.635 basic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. 3. dimensions are shown in millimeters (inches). 4. outline conforms to jedec outline ms-012aa. dimension does not include mold protrusions mold protrusions not to exceed 0.25 (.006). dimensions is the length of lead for soldering to a substrate.. 5 6 a1 e1 IRF7303 www.kersemi.com 8 2014-8-8
so8 dimensions are shown in millimeters (inches) 33 0.00 (12 .99 2) m a x. 14.40 ( .566 ) 12.40 ( .488 ) not es : 1. con tro lling dim ension : m illim eter . 2. outline conforms to eia-481 & eia-541. feed d irect ion terminal number 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. IRF7303 www.kersemi.com 9 2014-8-8
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